发明名称 |
DEVICE STRUCTURES FOR ACTIVE DEVICES FABRICATED USING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND DESIGN STRUCTURES FOR A RADIOFREQUENCY INTEGRATED CIRCUIT |
摘要 |
Device structure for active devices fabricated in a semiconductor-on-insulator (SOI) substrate and design structures for a radiofrequency integrated circuit. The device structure includes a first isolation region in the semiconductor layer that extends from a top surface of a semiconductor layer to a first depth, a second isolation region in the semiconductor layer that extends from the top surface of the semiconductor layer to a second depth greater than the first depth, and a first doped region in the semiconductor layer. The first doped region is disposed vertically between the first isolation region and an insulating layer disposed between the semiconductor layer and a handle wafer of the SOI substrate. The device structure may be included in a design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit.
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申请公布号 |
US2009267178(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
US20080108924 |
申请日期 |
2008.04.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABADEER WAGDI W.;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;RANKIN JED H.;ROBISON ROBERT R.;TONTI WILLIAM R. |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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地址 |
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