发明名称 |
MEMORY DEVICE WITH DIFFERENT TYPES OF PHASE CHANGE MEMORY |
摘要 |
A memory includes a first memory device including an array of phase changing memory cells. The first memory device is of a first memory type. The integrated circuit includes a second memory device including an array of phase changing memory cells. The second memory device is of a second memory type that is different than the first memory type. The first and second memory devices are packaged together into a single memory device.
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申请公布号 |
US2009268513(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
US20080111774 |
申请日期 |
2008.04.29 |
申请人 |
DE AMBROGGI LUCA;PHILIPP JAN BORIS;SCHROEGMEIER PETER;STEINLESBERGER GERNOT;DUC CHRISTIAN PHO;KREUPL FRANZ |
发明人 |
DE AMBROGGI LUCA;PHILIPP JAN BORIS;SCHROEGMEIER PETER;STEINLESBERGER GERNOT;DUC CHRISTIAN PHO;KREUPL FRANZ |
分类号 |
G11C11/00;G11C7/00;H01L21/00 |
主分类号 |
G11C11/00 |
代理机构 |
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主权项 |
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地址 |
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