| 摘要 |
A semiconductor device of present invention comprises a layered structure including a cladding layer with a first conductivity, an active layer, and a cladding layer with a second conductivity which are successively grown on a semiconductor substrate of (001) orientation, and an embedding layer covering both side surfaces of the layered structure in a widthwise direction across a longitudinal direction of the layered structure in a plane parallel to a surface of the semiconductor substrate. A portion of side surfaces of the active layer in the widthwise direction lies parallel to at least (010) or (100) surface.
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