发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER ANNEALING |
摘要 |
A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.
|
申请公布号 |
US2009267200(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
US20080110740 |
申请日期 |
2008.04.28 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
GUTT THOMAS;UMBACH FRANK;FELSL HANS PETER;PFAFFENLEHNER MANFRED;NIEDERNOSTHEIDE FRANZ-JOSEF;SCHULZE HOLGER |
分类号 |
H01L21/265;H01L29/36 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|