| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a phase-change element can be changed into a crystal state in set operation even when the optimal crystal growth temperature range of the phase-change element varies. <P>SOLUTION: In this phase-change memory, in the case of changing the phase-change element 5 from an amorphous state to the crystal state, after changing the temperature of the phase-change element 5 to nearly a fusing point by changing bit line voltage VBL to positive voltage Va and changing word line voltage VWL to the positive voltage Va, the temperature of the phase-change element 5 is lowered from nearly the fusing point to a temperature lower than a crystallization temperature by lowering the word line voltage VWL in a fixed inclination. Consequently, the temperature of the phase-change element 5 passes through the optimal crystal growth temperature range Tm in process of lowering, so that the phase-change element 5 can be changed into the crystal state. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
