发明名称 TWO BIT U-SHAPED MEMORY STRUCTURE AND METHOD OF MAKING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a two bit memory structure having floating gates with a U-shaped bottom and a method of making the two bit memory structure. Ž<P>SOLUTION: The memory structure includes: a substrate 50; a control gate 70 positioned on the substrate 50; a plurality of floating gates 74 positioned at two sides of the control gate 70, wherein the floating gates have a U-shaped bottom 57 embedded in the substrate 50; a first dielectric layer 52 positioned between the control gate 70 and the substrate 50; a second dielectric layer 62 positioned between the U-shaped bottom of the floating gates 74 and the substrate 50; a third dielectric layer 68 positioned between the control gate 70 and the floating gates 74; a local doping region 58 positioned around a floating gate channel 80; and a source/drain doping region 76 positioned in the substrate 50 at a side of the floating gates 74. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009253266(A) 申请公布日期 2009.10.29
申请号 JP20080211819 申请日期 2008.08.20
申请人 NANYA TECHNOLOGY CORP 发明人 LIAO WEI-MING;WANG JER-CHYI
分类号 H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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