| 摘要 |
Field-effect transistor comprising a gate electrode layer, a first dielectric layer, a source electrode, a drain electrode, an organic semiconductor and a second dielectric layer, wherein the first dielectric layer is located on the gate electrode layer, the source electrode, the drain electrode and the organic semiconductor are located above the first dielectric layer, the source electrode and the drain electrode are in contact with the organic semiconductor, wherein the second dielectric layer is placed upon the assembly of source electrode, drain electrode and organic semiconductor and wherein during operation of the field-effect transistor the capacitance of the assembly comprising the gate electrode layer and the first dielectric layer is lower than the capacitance of the second dielectric layer. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.
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