| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of a surface of a semiconductor multilayer film for improving light extraction efficiency without deteriorating an electric characteristic of a semiconductor light emitting element having the semiconductor multilayer film, and to provide a method of manufacturing the structure. <P>SOLUTION: In the semiconductor light emitting element formed by laminating the semiconductor multilayer film, two types of fine uneven structures are formed on the surface of the semiconductor multilayer film from which light is emitted. Sizes and arrangement of unevenness of the first uneven structure and the second uneven structure are changed. Thus, light extraction efficiency is increased without raising electric resistance of the semiconductor light emitting element. <P>COPYRIGHT: (C)2010,JPO&INPIT |
