METHOD OF LASER ANNEALING OF SEMICONDUCTOR LAYER, AND SEMICONDUCTOR DEVICES PRODUCED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a laser annealing method which enables annealing of a semiconductor layer without causing variations in electrical or physical properties of a semiconductor layer, can improve the efficiency of fabrication, and enables manufacture of large-sized products, and to provide a semiconductor device which is produced by this method.

SOLUTION: This method includes forming a nitrogen-doped layer on a semiconductor layer (200), the nitrogen-doped layer having a nitrogen concentration of at least 3×1020atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam (202) and irradiating a second area of the nitrogen-doped layer in the low oxygen environment with the laser beam, a part of the second area overlapping with the first area (204).

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