PROCESS FOR PRODUCTION OF ZINC OXIDE SINGLE CRYSTAL SUBSTRATE, SINGLE CRYSTAL SUBSTRATE GROWN BY THE PROCESS, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE COMPRISING THE SUBSTRATE AND FILM FORMED THEREON

摘要

In a hydrothermal synthesis process of growing a zinc oxide single crystal on a zinc oxide seed crystal under supercritical conditions by using an aqueous KOH solution as the solvent, the stoichiometric composition is attained by cutting a zinc oxide seed crystal in the direction perpendicular to the c-axis; using the c-face as single crystal growth face; using, as the mineralizer, only KOH which has an effect of growing a single crystal in the direction of c-axis; adjusting the temperature difference (?T) between dissolution zone (into which zinc oxide is fed) and single crystal zone to 3 to 7° to suppress the mineralizing action of KOH; adding hydrogen peroxide as an oxidizer for attaining the stoichiometric composition; cooling the inside of a single crystal growth vessel prior to the addition to inhibit the decomposition of hydrogen peroxide and thus control the oxygen partial pressure; and using, as the starting zinc oxide, zinc oxide particles which are precipitated by hydrothermal synthesis in an aqueous alkaline solution containing an oxidizer.