| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GOI evaluation method of a silicon wafer, which can be simply performed with high reliability by a nondestructive inspection. Ž<P>SOLUTION: The GOI evaluation method of the silicon wafer is provided, which determines quality of electric characteristics of a gate oxidation film by at least forming the gate oxide film on the silicon wafer, by performing X-ray diffraction measurement to silicon wafer surface layer part directly under the formed gate oxide film, and whether or not half width of a rocking curve to be obtained by measurement is 0.00110° or less. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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