发明名称 Through-substrate power-conducting via with embedded capacitance
摘要 When integrated circuits are mounted on a substrate, little space is often available for the required large number of bypass capacitors. A novel substrate structure therefore includes many closely spaced through-holes that extend from a first surface of the substrate to a second surface of the substrate. Each through-hole includes a first conducting layer, a dielectric layer, and a second conducting layer. The first and second conducting layers and the intervening dielectric layer constitute a via having a substantial capacitance (one picofarad). Some of the many vias provide bypass capacitance directly under the integrated circuits. A first set of vias supplies power from a power bus bar on one side of the substrate to the integrated circuits on the other side. A second set of vias sinks current from the integrated circuits on the other side, through the substrate, and to a ground bus bar on the one side.
申请公布号 US2009267183(A1) 申请公布日期 2009.10.29
申请号 US20080150529 申请日期 2008.04.28
申请人 RESEARCH TRIANGLE INSTITUTE 发明人 TEMPLE DOROTA;CONN ROBERT O.
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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