| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method in which high-accuracy dry etching can be performed. SOLUTION: This method for manufacturing the semiconductor device includes steps of: forming, on an etching target, a resist film which has a crowd pattern having a plurality of crowd openings with small opening widths and a broad pattern composed of an opening having an opening width greater than the opening width of the crowd pattern, and is formed with a cutout in the vicinity of a corner in which an angle on the opening side of the broad pattern is smaller than 180 degrees; and dry-etching the etching target with the resist film as a mask so that the crowd pattern and the broad pattern of the resist film are transferred. COPYRIGHT: (C)2010,JPO&INPIT
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