发明名称 POWER SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of shutting off current more steadily when the power semiconductor element fails. SOLUTION: A first electric wiring Wb1 is electrically connected to a power semiconductor element. A second electric wiring Wb2 has a second end Eb2 opposite to a first end Eb1 with a space between the ends. A joint Rb contains at least one high resistance portion Rb having a higher resistance value per unit length than that of each of the first end Eb1 and the second end Eb2. The high resistance portion Rb connects the first end Eb1 and the second end Eb2. A low melting point metal portion LM is made of a metal of a lower melting point than the melting point of the high resistance portion Rb and covers the joint Rb so as to connect the first end Eb1 and the second end Eb2. A heater can heat at least part of the low melting point metal portion LM above the melting point of the low melting point metal portion LM. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009252541(A) 申请公布日期 2009.10.29
申请号 JP20080099173 申请日期 2008.04.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 FUJITA SHIGETO
分类号 H01H37/76;H01H85/048;H01H85/06;H01H85/10;H01L23/00 主分类号 H01H37/76
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