| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a current collapse and leakage current, softening an electric field concentration and improving a dielectric resistance. <P>SOLUTION: The semiconductor device 1 includes a control electrode 5 and second main electrode 4 which are separately located on a nitride semiconductor 2 each other, a first insulator 6 which is located between the control electrode 5 and second main electrode 4 on the nitride semiconductor 2, a first field plate 5FP whose one edge is electrically connected with the control electrode 5 and another edge is located between the control electrode 5 and the second main electrode 4 on the first insulator 6, and a resistive field plate 7 whose one edge is connected with the first field plate 5FP on the first insulator 6, another edge is extended towards the second main electrode 4, and has a higher sheet resistance in comparison with the first field plate 5FP. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
