| 摘要 |
There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0<=x<1). The principal plane of the substrate is a plane in which an A plane {11-20} or an M plane {10-10} is inclined in a direction of -c axis.
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