| 摘要 |
The invention relates to a semiconductor device comprising a substrate (1) and at least one interconnect layer located at a surface of the substrate (1), the interconnect layer comprising a first wire (20'') and a second wire (20') which are located in the interconnect layer, the first wire (20'') having a first thickness (T1) and the second wire (20'having a second thickness (T2) that is different from the first thickness, the thickness (T1,T2) being defined in a direction perpendicular to said surface. The invention further relates to a method of manufacturing a semiconductor device comprising a substrate (1) and an interconnect layer located at a surface of the substrate (1), the interconnect layer comprising a first wire (20'') and a second wire (20) which are located in the interconnect layer.
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