发明名称 |
TUNNEL MAGNETORESISTANCE (TMR) STRUCTURES WITH MGO BARRIER AND METHODS OF MAKING SAME |
摘要 |
A method in one embodiment includes forming a first layer of magnesium above at least one of a free layer and a reference layer; exposing the first layer of magnesium to an oxidizing environment for causing oxidation of the first layer of magnesium; forming a second layer of magnesium above the oxidized first layer of magnesium; and exposing the second layer of magnesium to the oxidizing environment for causing oxidation of the second layer of magnesium. A system in one embodiment includes a free layer; and a tunnel barrier layer having microstructure and composition characteristic of in situ natural oxidation of magnesium. Additional systems and methods are also presented.
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申请公布号 |
US2009268351(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
US20080110681 |
申请日期 |
2008.04.28 |
申请人 |
ZELTSER ALEXANDER M |
发明人 |
ZELTSER ALEXANDER M. |
分类号 |
G11B5/33;B05D3/10;B32B9/00 |
主分类号 |
G11B5/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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