MICROFABRICATION OF CARBON-BASED DEVICES SUCH AS GATE-CONTROLLED GRAPHENE DEVICES
摘要
A graphene device includes a graphene layer and a back gate electrode connected to apply a global electrical bias to the graphene from a first surface of the graphene. At least two graphene device electrodes are each connected to a corresponding and distinct region of the graphene at a second graphene surface. A dielectric layer blanket-coats the second graphene surface and the device electrodes. At least one top gate electrode is disposed on the dielectric layer and extends over a distinct one of the device electrodes and at least a portion of a corresponding graphene region. Each top gate electrode is connected to apply an electrical charge carrier bias to the graphene region over which that top gate electrode extends to produce a selected charge carrier type in that graphene region. Such a carbon structure can be exposed to a beam of electrons to compensate for extrinsic doping of the carbon.
申请公布号
WO2009132165(A2)
申请公布日期
2009.10.29
申请号
WO2009US41488
申请日期
2009.04.23
申请人
PRESIDENT AND FELLOWS OF HARVARD COLLEGE;MARCUS, CHARLES, M.;WILLIAMS, JAMES, R.;CHURCHILL, HUGH OLEN, HILL
发明人
MARCUS, CHARLES, M.;WILLIAMS, JAMES, R.;CHURCHILL, HUGH OLEN, HILL