发明名称 CURRENT CONSTRICTION-TYPE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a current constriction-type semiconductor light emitting element having high light emission efficiency and to provide a manufacturing method of the current constriction-type semiconductor light emitting element for inexpensively manufacturing such a current constriction-type semiconductor light emitting element. <P>SOLUTION: The current constriction-type semiconductor light emitting element is provided with a first conductivity type laminated body, a light emitting layer, a second conductivity type laminated body, a current constriction layer, and a first electrode having a first opening in order, and it is further provided with a second electrode arranged on the opposite side to a second conductivity type laminated body in the light emitting layer. The current constriction layer is provided with a second opening from which the second conductivity type laminated body is exposed. The center of the second opening and that of the first opening are made to be the same. An area of the second opening is made larger than that of the first opening. A part of the first electrode is brought into contact with the second conductivity type laminated body. A part of the second conductivity type laminated body is arranged to be exposed from the first opening. A reflection face having a high reflection ratio for light having peak wavelengths between 200-350 nm is disposed on the opposite side to a light emitting layer of the first conductivity type laminated body. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009252836(A) 申请公布日期 2009.10.29
申请号 JP20080096242 申请日期 2008.04.02
申请人 DOWA ELECTRONICS MATERIALS CO LTD 发明人 OTA YUTAKA;OSHIKA YOSHIKAZU
分类号 H01L33/06;H01L33/10;H01L33/14;H01L33/32;H01L33/38 主分类号 H01L33/06
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