| 摘要 |
PROBLEM TO BE SOLVED: To improve durability by preventing a large stress from acting to a metal layer 14 for bonding a semiconductor element 12 to a substrate 16. SOLUTION: The thickness of a peripheral region of the semiconductor device 12 is made to be thinner than the thickness of a center region of the semiconductor device 12. The thickness of the semiconductor device in the peripheral region where a large stress develops on the metal layer 14 is reduced, so that a phenomenon in which a large stress repeatedly acts to the metal layer 14 can be prevented, and the durability of the metal layer 14 can be improved. Specifically, the thickness is reduced on the rear surface of the semiconductor device 12 so that the thickness of the metal layer 14 can be increased on the peripheral region, thereby also decreasing the stress acting to the metal layer 14 to improve the durability. COPYRIGHT: (C)2010,JPO&INPIT
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