| 发明名称 |
SOLUTION-PROCESSED INORGANIC FILMS FOR ORGANIC THIN FILM TRANSISTORS |
| 摘要 |
A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method BB includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film Si wafer Si wafer transistor incorporating the sol-gel film are also disclosed.
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| 申请公布号 |
US2009267058(A1) |
申请公布日期 |
2009.10.29 |
| 申请号 |
US20070302155 |
申请日期 |
2007.05.22 |
| 申请人 |
NAMDAS EBINAZAR BENJAMIN;CAHYADI TOMMY;MHAISALKAR G SUBODH;LEE POOI SEE;CHEN ZHIKUAN;LAM YENG MING;SONG LIXIN |
发明人 |
NAMDAS EBINAZAR BENJAMIN;CAHYADI TOMMY;MHAISALKAR G. SUBODH;LEE POOI SEE;CHEN ZHIKUAN;LAM YENG MING;SONG LIXIN |
| 分类号 |
H01L51/30;H01B3/00;H01B3/18;H01L51/40 |
主分类号 |
H01L51/30 |
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