| 摘要 |
A high performance TMR sensor with a spacer including at least one Cu layer and one or more MgO layers is disclosed. Optionally, Cu may be replaced by one of Au, Zn, Ru, or Al. In addition, there may be a dopant such as Zn, Mn, Al, Cu, Ni, Cd, Cr, Ti, Zr, Hf, Ru, Mo, Nb, Co, or Fe in the MgO layer. In an alternative embodiment, the MgO layer may be replaced by other low band gap insulating or semiconductor materials. A resonant tunneling mechanism is believed to be responsible for achieving an ultra-low RA of <0.4 muohm-cm2 in combination with a MR of 14%, low magnetostriction, and a low Hin value of about 20 Oe. The Cu layer thickness is from 0.1 to 10 Angstroms and the MgO thickness is from 5 to 20 Angstroms in spacer configurations including Cu/MgO/Cu, MgO/Cu/MgO, Cu/MgO, MgO/Cu, Cu/MgO/Cu/MgO/Cu, and (Cu/MgO)n/Cu multilayers.
|
