| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting device for reducing a driving voltage and improving output. <P>SOLUTION: The group III nitride semiconductor light-emitting device includes: a substrate; a multilayer semiconductor layer; a transparent electrode layer 17; a p-type electrode pad 18; and an n-type electrode pad 19, wherein the plane view shape is a quadrilateral, and the transparent electrode layer 17 is configured of a transparent conductive oxide containing at least one kind of In, Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, and Ni, and an inter-terminal distance m between the p-type electrode pad 18 and the n-type electrode pad 19 satisfies 0.7L<m (L is length obtained by subtracting the external diameter d of the p-type electrode pad 18 from the length of the transparent electrode layer 17 on a straight line n connecting the centers of gravity O<SB>1</SB>and O<SB>2</SB>of the p-type electrode pad 18 and the n-type electrode pad 19), and when the length of a long side is defined as X, and the length of a short side as Y, a group III nitride semiconductor light-emitting device 1 satisfying 1.5≤X/Y is adopted. <P>COPYRIGHT: (C)2010,JPO&INPIT |
