发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND CORRECTION METHOD OF THIN FILM TRANSISTOR ARRAY SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate in which troubles such as disconnection of gate lines, if any, can be easily corrected. Ž<P>SOLUTION: The thin film transistor array substrate includes gate lines and source lines formed so as to cross each other, pixel electrodes formed in areas surrounded with the gate lines and the source lines, thin film transistors formed near intersections between the gate lines and the source lines, and drain lines having first connection parts connected to the thin film transistors and second connection parts connected to the pixel electrodes. In this thin film transistor array substrate, first branch lines for correction are extended from the drain lines toward the gate lines, and second branch lines for correction are extended from the drain lines toward the gate lines, and these first and second branch lines for correction are superposed on the gate lines through an insulating film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009251494(A) 申请公布日期 2009.10.29
申请号 JP20080102220 申请日期 2008.04.10
申请人 SHARP CORP 发明人 SAITO TAKATOSHI
分类号 G02F1/1368;G09F9/30;H01L21/336;H01L29/786 主分类号 G02F1/1368
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