发明名称 |
NITRIDE BASED SEMICONDUCTOR DEVICE USING NANORODS AND PROCESS FOR PREPARING THE SAME |
摘要 |
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
|
申请公布号 |
US2009269909(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
US20090497060 |
申请日期 |
2009.07.02 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM MIN HO;KOIKE MASAYOSHI;MIN KYEONG IK;LEE SEONG SUK;JANG SUNG HWAN |
分类号 |
H01L21/20;H01L33/12;H01L33/16;H01L33/32;H01L33/34 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|