| 摘要 |
The invention relates to a method of manufacturing a semiconductor device (10) comprising a semiconductor body (2) provided with a field effect transistor (3), wherein a polycrystalline silicon region (5) with a metal layer (6) deposited thereon is transformed into a metal suicide gate electrode (3D) so as to form the gate electrode (3D), whereupon the part of the metal layer (6) that remains after this reaction is removed by etching. According to the invention, the semiconductor body (2) is exposed in a thermal treatment to an atmosphere comprising an oxygen-containing compound before or during the formation of the metal suicide (3D) gate electrode. In this way a transistor (3) comprising a gate electrode (3D) having a low resistance is obtained. The invention is particularly suitable for the manufacture of a PMOST, with Platinum or Palladium being used as the metal layer.
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