| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently analyze the trouble of a semiconductor device by a secondary electron image. <P>SOLUTION: The analyzer of the semiconductor device is equipped with a means for simulating a potential density distribution in a case that the semiconductor device becoming an analyzing target is observed on the basis of the plan data of the semiconductor device to form a potential density simulated image, a means for inputting the secondary electron image obtained by irradiating the semiconductor device being the analyzing target with a charged particle beam, a means for executing image restoring processing for restoring the original image by performing deconvolution processing with respect to the secondary electron image of the semiconductor device being the analyzing target or image deteriorating processing for performing convolution processing with respect to the potential density simulated image to obtain the deteriorated image corresponding to the secondary electron image and a means for displaying the image subjected to image restoring processing or image deteriorating processing and another image. <P>COPYRIGHT: (C)2010,JPO&INPIT |
