| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which stably forms a fine contact hole without damaging a substrate even when a space between gate electrodes is narrow and to provide a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor device includes: gate electrodes 13 formed on a substrate 11 with a space therebetween; a first insulating film 16 formed on the substrate 11 so that a region between the gate electrodes 13 may be filled and the gate electrodes 13 may be covered; a second insulating film 17 and a third insulating film 18 formed sequentially from bottom on the first insulating film 16; and a contact plug 22 penetrating the first insulating film 16, the second insulating film 17, and the third insulating film 18 and electrically connecting with a source drain region 15. The first insulating film 16 consists of a material in which dry etching is possible by a gas which contains a hydrogen atom and does not contain a fluorine atom. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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