| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a CMOSFET having a threshold voltage appropriate for PMOS and NMOS, using a gate insulating film of high dielectric constant. Ž<P>SOLUTION: Without using a lantern oxide film with delinquency as a cap film, an insulating film containing lantern is formed on a silicon oxide film 104 before an insulating film 111 containing hafnium is formed, to protect the insulating film 111 containing hafnium. Further, an SiGe layer 108 is epitaxial-grown in a PMOS region having been damaged by etching. Thus a structure having such threshold voltage as appropriate for PMOS and NMOS is formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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