SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the operation voltage of a clamp diode while suppressing its leakage current. SOLUTION: With respect to a semiconductor device including the clamp diode, a P--type diffusion layer 5 is formed in the surface of an N--type semiconductor layer 2. An N+-type diffusion layer 6 is formed in the surface of the P--type diffusion layer 5. A P+-type diffusion layer 7 is formed in the surface of the P--type diffusion layer 5 adjacently to the N+-type diffusion layer 6. An N+-type diffusion layer 8 is formed in the N--type semiconductor layer 2 adjacent to the P--type diffusion layer 5. A contact hole is opened in an insulation layer 9 on the N+-type diffusion layer 6, and a cathode electrode 10 electrically connected with the N+-type diffusion layer 6 is formed through this contact hole. Other contact holes are opened in the insulation layer 9 on the P+-type diffusion layer 7 and the N+-type diffusion layer 8, respectively, and a wiring layer 11 (an anode electrode) connecting the P+-type diffusion layer 7 and the N+-type diffusion layer 8 is formed through the respective other contact holes. COPYRIGHT: (C)2010,JPO&INPIT