THIN-FILM TRANSISTOR MANUFACTURING METHOD, AND THIN-FILM TRANSISTOR

摘要

Provided is a metal wiring film that does not peel-off even if exposed to hydrogen plasma. The metal wiring film (20a) is comprised of a cohesive layer (51) in which aluminum is added to copper, and a low-resistance metal layer (52) comprised of pure copper and disposed on the cohesive layer (51). A copper alloy containing aluminum and oxygen is included in the cohesive layer (51), and the source electrode film (27) and the drain electrode film (28) are both adhered to the silicon layer in the configuration, and thereby copper is not precipitated on the interface between the cohesive layer (51) and the silicon layer, and no peeling occurs between the cohesive layer (51) and the silicon layer, even if exposed to hydrogen plasma. Therefore, as the amount of aluminum increases, the widths of the cohesive layer (51) and the metal low-resistance layer (52) differ significantly after etching, and the maximum amount that can be added while still allowing etching is the upper limit.