| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device for reducing short-wavelength shift and achieving long-wavelength oscillation. SOLUTION: A semiconductor laser diode 70 includes a substrate 1, and a group III nitride semiconductor multilayer structure 2 formed on the substrate 1. The substrate 1 is a GaN monocrystalline substrate whose major surface is an m-plane. The group III nitride semiconductor multilayer structure 2 is formed by crystal growth. The group III nitride semiconductor multilayer structure 2 is configured by laminating an n-type semiconductor layer 11, an active layer 10, and a p-type semiconductor layer 12. The active layer 10 has a multiple quantum well structure for which an InGaN quantum well layer and an AlGaN barrier layer are stacked. A resonator end face 21 is coated by a distributed Bragg reflector for which the center wavelengthλ<SB>C</SB>of a reflectance spectrum satisfies the relationλ<SB>SP</SB>-10 nm≤λ<SB>C</SB>≤λ<SB>SP</SB>+10 nm with respect to the emission peak wavelengthλ<SB>SP</SB>of spontaneous emission in the active layer 10. COPYRIGHT: (C)2010,JPO&INPIT
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