| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser suppressing leakage current, and to provide a manufacturing method of the laser. SOLUTION: In the manufacturing method of the semiconductor laser 1, a mass transport part 30a is formed on a side of an upper InP clad layer 26 among sides of a semiconductor mesa 21. In the semiconductor mesa 21, an edge end position P on a lower end face of the upper InP clad layer 26 is on an outer side compared to an edge end position Q of an upper end face, in a cross section orthogonal to an extending direction. At the formation of the mass transport part 30a on the side of the upper InP clad layer 26, the inventor newly finds out that an InP-embedded layer 30 can be formed with high precision. Accordingly, the InP-embedded layer 30 is formed with high precision, by forming the semiconductor laser 1 by using such a method, and accordingly, leakage current in the formed semiconductor laser 1 is significantly suppressed. COPYRIGHT: (C)2010,JPO&INPIT
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