| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device wherein a gate insulating film for which EOT is small and the increase of interface level density is suppressed is provided and a leakage current is suppressed even when miniaturized, and to provide a method of manufacturing the same. Ž<P>SOLUTION: The manufacturing method of the semiconductor device includes: a step (a) of forming a first oxide film 203 on a first region 102; a step (b) of performing plasma nitriding treatment to a semiconductor substrate 101, introducing nitrogen to the first oxide film 202 and forming a first gate insulating film 203; a step (c) of performing thermal treatment to the semiconductor substrate 101 under an oxidizing atmosphere and oxidizing the first gate insulating film 203; a step (d) of performing the plasma nitriding treatment to the semiconductor substrate 101 and introducing the nitrogen further to the first gate insulating film 203; and a step (e) of performing the thermal treatment to the semiconductor substrate 101 under an oxygen atmosphere and oxidizing the first gate insulating film 203. In the step (b), the semiconductor substrate 101 is not directly nitrided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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