| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has an element isolation trench and allows cost reduction, and to provide a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor device comprises: a semiconductor substrate 10; a memory cell region 5 which comprises a gate structure in which a floating gate film 21, an inter-gate insulating film 15 and a control gate film 23 are sequentially laminated on a surface of the semiconductor substrate 10 through a first gate insulating film 11a, has a base inside the semiconductor substrate 10 at a first distance d1 from an upper surface of the floating gate film 21, and comprises an element isolation insulating film 33a filling at least the inside the semiconductor substrate 10; and a peripheral circuit element part 6 which comprises a gate electrode film 25 constituting a lamination structure formed through a second gate insulating film 11b on the surface of the semiconductor substrate 10, has a base inside the semiconductor substrate 10 at a second distance d2 which is substantially equal to the first distance d1 from an upper surface of a second polycrystal silicon film 14 in a lowest layer thinner than the floating gate film 21 of the gate electrode film 25, and comprises an element isolation insulating film 33b filling at least the inside the semiconductor substrate 10. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
