发明名称 |
METHOD FOR FORMING RESIST PATTERN |
摘要 |
A method for forming a resist pattern that includes the steps of: forming a resist film on a substrate using a resist composition including a resin component (A) that exhibits changed alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure; selectively exposing the resist film; and developing the resist film using an alkali developing solution for a developing time of less than 30 seconds, thereby forming a resist pattern.
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申请公布号 |
US2009269706(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
US20050813512 |
申请日期 |
2005.12.13 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
MIMURA TAKEYOSHI;HAYASHI TOMOHIKO |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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