发明名称 METHOD FOR FORMING RESIST PATTERN
摘要 A method for forming a resist pattern that includes the steps of: forming a resist film on a substrate using a resist composition including a resin component (A) that exhibits changed alkali solubility under the action of acid and an acid generator component (B) that generates acid upon exposure; selectively exposing the resist film; and developing the resist film using an alkali developing solution for a developing time of less than 30 seconds, thereby forming a resist pattern.
申请公布号 US2009269706(A1) 申请公布日期 2009.10.29
申请号 US20050813512 申请日期 2005.12.13
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 MIMURA TAKEYOSHI;HAYASHI TOMOHIKO
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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