发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING THE SAME |
摘要 |
<p>A plasma processing apparatus is provided with a reaction chamber; a gas introducing section for introducing a reaction gas to the reaction chamber; an air releasing section for releasing the reaction gas from the reaction chamber; planar first electrode and second electrode which are arranged to face each other in the reaction chamber and perform plasma discharge in the reaction gas; a shifting mechanism which supports or fixes the first electrode or the second electrode and shifts the electrode in the opposite directions; and a fixing piece which supports or fixes at least the first electrode or the second electrode. The first electrode or the second electrode is shifted by the shifting mechanism, and peripheral portions of the first electrode and the second electrode abut to the fixing piece. Thus, the shortest distance between the first electrode and the second electrode can be determined.</p> |
申请公布号 |
WO2009131048(A1) |
申请公布日期 |
2009.10.29 |
申请号 |
WO2009JP57610 |
申请日期 |
2009.04.15 |
申请人 |
SHARP KABUSHIKI KAISHA;KISHIMOTO, KATSUSHI;FUKUOKA, YUSUKE |
发明人 |
KISHIMOTO, KATSUSHI;FUKUOKA, YUSUKE |
分类号 |
H01L21/205;C23C16/509 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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