发明名称 |
METHOD FOR MANUFACTURING SILICON NANO-STRUCTURE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing silicon nano-structure. <P>SOLUTION: The method for manufacturing silicon nano-structure includes: a first step of providing a growing device comprising a heating furnace and a reacting room; a second step of providing a catalyst material and a growing substrate and placing the catalyst material and the growing substrate separately in the reacting room; and a third step of introducing a silicon-containing gas and hydrogen gas into the reacting room and heating the reacting room to 500-1,100°C to thereby grow silicon nano-structure on the growing substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2009249279(A) |
申请公布日期 |
2009.10.29 |
申请号 |
JP20090091139 |
申请日期 |
2009.04.03 |
申请人 |
QINGHUA UNIV;HON HAI PRECISION INDUSTRY CO LTD |
发明人 |
SUN-HAI-LIN;JIANG KAILI;LI QUNQING;FAN FENG-YAN |
分类号 |
C01B33/027;B82B3/00;C01B33/02;H01L21/205;H01L29/06 |
主分类号 |
C01B33/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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