发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To make it possible to acquire adequate plasma even in a tip of a protecting tube which accommodates an electrode without reducing strength and elasticity of the electrode for generating plasma even if the temperature is high in a substrate processing apparatus. Ž<P>SOLUTION: The substrate processing apparatus is provided with: a processing tube 46 which accommodates a plurality of substrates which are laminated; a heating means which heats the substrates; at least a pair of protecting tubes 71 which are inserted into the processing tube from the lower part of the processing tube, and have a curved part 76 and a straight line part 77 which extends in the lamination direction of the substrate; and electrodes 69 which are accommodated in the protection pipe, respectively, and to which high frequency power is applied. The electrode has a structure in which a member with the wire rod interweaved on a plane surface covers around a structured body with the wire rod wound in the shape of a coil. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009253013(A) 申请公布日期 2009.10.29
申请号 JP20080099088 申请日期 2008.04.07
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ISHIMARU NOBUO
分类号 H01L21/31;C23C16/44 主分类号 H01L21/31
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