| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for which a connection failure and reliability degradation have been solved; and its manufacturing method. SOLUTION: This semiconductor device is provided with: a first semiconductor package 1 having a carrier substrate 3, a first semiconductor chip 2 mounted on the upper surface of the carrier substrate 3, and first metal balls 5 formed on the back face of the carrier substrate 3; a substrate 7 formed with electrode lands 6 connected to the first metal balls 5 on the upper surface; and a plate 9 arranged between the first semiconductor package 1 and the substrate 7, and formed with holes formed at positions adapted to the first metal balls 5 for housing the first metal balls 5 therein. The plate 9 is formed of a material having excellent thermal conductivity. COPYRIGHT: (C)2010,JPO&INPIT
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