| 摘要 |
The invention relates to a method for manufacturing bismuth single crystal nonowires by using bismuth(Bi) powder, more particularly to a method for manufacturing the bismuth single crystal nonowires on a substrate by heat-treating bismuth powder positioned in the front end of a reactor and the substrate positioned in the rear end of a reactor in an atmosphere flowing inert gas. Since the bismuth nonowires can be manufactured by using a vapor-phase transport process without the use of a template, the disclosed method is simple and reproductive. In addition, the produced Bi nonowires ensure high purity and high quality in a complete single crystal state which does not have defects. Furthermore, the disclosed method can mass-produce solid bismuth nonowires which are not coagulated on the substrate. |
