发明名称 ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS
摘要 <p>A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.</p>
申请公布号 WO2009131825(A2) 申请公布日期 2009.10.29
申请号 WO2009US39653 申请日期 2009.04.06
申请人 APPLIED MATERIALS, INC.;LEE, SANG, M.;LEE, YONG-WON;SHEK, MEIYEE;XIA, LI-QUN;WITTY, DEREK, R. 发明人 LEE, SANG, M.;LEE, YONG-WON;SHEK, MEIYEE;XIA, LI-QUN;WITTY, DEREK, R.
分类号 H01L21/28;H01L21/3205 主分类号 H01L21/28
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