| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent device failure by preventing a short circuit of a word line and a buried bit line due to an excessive etching. CONSTITUTION: A method for manufacturing a semiconductor device is comprised of the steps: forming a vertical pillar on a semiconductor substrate(200); forming a gate electrode layer pattern(208) on the sidewall of the vertical pillar; forming the buried bit line(212) within the semiconductor substrate under the gate electrode layer; forming the first insulating layers filling up the gap between gate electrode layer patterns; forming an etch stop layer pattern(218a) on the surface of the first insulating layer and the gate electrode pattern; and forming a surround gate by etching the gate electrode layer pattern.
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