| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing an occupied area, and to provide a manufacturing method thereof. Ž<P>SOLUTION: The semiconductor storage device is provided with: a memory cell array 5 having elements arranged like a matrix on a semiconductor substrate 51; a word line 21 having patterns of lines and spaces, and connected to the elements on the memory cell array 5 along rows or columns of the memory cell array 5; a word line leader part 22 having a first part 23a to which the word line 21 is extended by the patterns of lines and spaces, a third part 23c parallel to the first part 23a and with width wider than that of the word line 21, and a second part 23b connected to the edge of the first part 23a approximately at 90 degrees, having length equivalent to a space to be connected to the edge of the third part 23c, an interval between the first part 23a and the opposite inside of the third part 23c is equivalent to the space, and an interval which separates the edge of another adjacent first part 23a and the third part 23c is equivalent to the space; and a word line contact 25 connected to the third part 23c outside the memory array cell 5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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