| 摘要 |
A semiconductor device includes: a semiconductor substrate; a plurality of transistors on the semiconductor substrate, each of the transistors has a source and drain region; an interlayer insulating film on the semiconductor substrate and the plurality of transistors; and at least three capacitors on the interlayer insulation film, each of them has a top electrode, a bottom electrode and an insulating film interposed therebetween; wherein the 1st and 2nd capacitors have an shared electrode, with the top electrodes of the 1st and 2nd capacitors, which has a 1st longer direction, the 2nd and 3rd capacitors have an shared electrode, with the bottom electrodes of the 2nd and 3rd capacitors, which has a 2nd longer direction different from the 1st direction.
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