| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for resist lower-layer film formation that forms a resist lower-layer film which is suitably buried in a via or trench, easily formed based upon a desired pattern, and superior in etching resistance, and a method of forming a dual-damascene structure using the same. <P>SOLUTION: The composition for resist lower-layer film formation contains (A) a polymer having an aryl group, (B) a surfactant having an acethylene group, and (C) a solvent. Further, the composition for resist lower-layer film formation may contain (D) an acid forming agent and (E) a crosslinking agent. <P>COPYRIGHT: (C)2010,JPO&INPIT |
