| 摘要 |
<P>PROBLEM TO BE SOLVED: To more easily form a graphite film at a desired part on a substrate having insulating property with excellent reproducibility. Ž<P>SOLUTION: A reference pattern 102 of the length of 5 μm, the width of 1 μm, and the height (the film thickness) of 40 nm in plan view is formed on an insulating substrate 101 consisting of silicon oxide (SiO<SB>2</SB>). Next, the insulating substrate 101 with the reference pattern 102 being formed thereon is conveyed into a treatment chamber of a well-known thermal CVD apparatus, heated to 850°C, and ethanol gas is fed thereto as raw material gas. For example, ethanol gas is allowed to flow for about 30 minutes. Thus, a graphite film 103 is formed by a stepped part at a peripheral end of the reference pattern 102. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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