| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition method which performs deposition treatment to an object in a clean state, and improves an apparatus operation rate and deposition processing efficiency, and a deposition apparatus. Ž<P>SOLUTION: A cleaning step (step S13) of cleaning the inside of a chamber in a state that a metal substrate is housed, is provided between a pressure reduction step (Step S12) of decompressing the inside of the chamber in which the metal substrate is housed to a prescribed pressure and a deposition step (step S15) of depositing a silicon-based thin film on the metal substrate housed within the chamber. In the cleaning step (step S13), the residual film removing treatment for removing the residual film adhering to the chamber by the deposition treatment, and the residue removing treatment for removing the residue of the product by the residual film removing treatment are executed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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