| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating a vertical transistor in a semiconductor device to prevent a cylindrical silicon pattern from collapsing due to a neck portion located at a bottom of the silicon pattern and to prevent a gate electrode from being etched due to misalignment in fabrication of the vertical transistor included in a semiconductor device. SOLUTION: The method of fabricating a semiconductor storage device relevant to fabrication of the vertical transistor includes steps of: etching a semiconductor substrate to form a pillar-type channel region pattern; forming a buried bit line in a bottom of the channel region pattern; forming a gate electrode pattern that surrounds the channel region pattern; forming a word line that connects to the gate electrode pattern; and forming a storage node over the channel region pattern and the gate electrode pattern. COPYRIGHT: (C)2010,JPO&INPIT
|
